n/a

Purpose

The project aims to address barriers limiting the development of highly relevant optoelectronic-based group-IV technologies and TXz-to-MIR technologies. The proposed THz-to-MIR compact photonic platforms will capitalize on recent advances in controlling the structural and optoelectronic properties of (Si)GeSN direct bandgap materials. The Micro-net will collectively advance research and establish new materials physics to develop an atomistic-level understanding of growth phenomena shaping the basic properties of (Si)GeSN-based nanoscale and quantum structures, develop devise structures to harness the optoelectronic and photonic properties of (Si)GeSn-based materials and optimize the performance of light emitters, detectors and sensing devices.