Purpose
Recent decades have witnessed phenomenal growth in the quantum technology sector, with breakthrough demonstrations in sensing, communication, and computing. In the past five years, silicon’s “T-center,” an atomic-scale defect, has emerged as a promising quantum hardware platform due to its telecom optical emission, compatibility with silicon-on-insulator (SOI) substrates, and long-lived electronic and nuclear spins. Nevertheless, defects in SOI currently suffer from inefficient fabrication, poor spin and optical properties, and open questions regarding their coupling to material strain.
The Governors of the University of Calgary × Unknown
15 grants totalling $5.4M
Collaborative Science, Technology and Innovation Program - Collaborative R&D Initiatives
1,000 grants totalling $348.9M
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