Carleton University

Purpose

As a wide-bandgap compound semiconductor with high-bond strength, Gallium Nitride (GaN) exhibits the ability to operate in extreme environments. The highbond strength makes it inherently radiation hard, while the wide bandgap allows for operation at high temperature (or room temperature with reduced carrier concentration). In the Project,GaN material properties subject to heavy irradiation will beexplored, along with two-types of sensors. Both sensors leverage the same quantum mechanical phenomena of the 2-dimensional electron gas (2DEG) which forms at a GaN/AlGaN heterojunction.